Transistor MOS-N-Ch 55V 84A 170W <11mR(43A)
Pickup at the LEMONA electronics store within 2 hours (if the item is in the store and the order is placed before 3 p.m.)
 3 pcs | Vilnius Žirmūnai Store |
| 3 pcs | Vilnius Naujamiestis Store |
| 1 pcs | Kaunas Store |
| 2 pcs | Klaipėda Store |
| 3 pcs | Šiauliai Store |
| 20 pcs | Central Warehouse (new location) |
Home delivery in Lithuania 1-2 b.d.
Delivery to pickup location 1-2 b.d.
Delivery terms
Pickup In Store
Pickup In Store For free
Quantity in shop
| 3 pcs | Vilnius Žirmūnai Store |
| 3 pcs | Vilnius Naujamiestis Store |
| 1 pcs | Kaunas Store |
| 2 pcs | Klaipėda Store |
| 3 pcs | Šiauliai Store |
| 20 pcs | Central Warehouse (new location) |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
€2.39
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Experimental product description generated by artificial intelligence
INFINEON Transistor MOS-N-Ch 55V 84A 170W <11mR(43A)
This high-power N-channel MOSFET from INFINEON is part of the HEXFET family, known for its advanced process technology and efficiency. It's ideal for applications demanding high current and voltage handling capabilities.
Key Features
- 55V Drain-to-Source Breakdown Voltage
- 84A Continuous Drain Current
- 170W Power Dissipation
- Low On-Resistance: <11mR(43A)
- Fast Switching
- Fully Avalanche Rated
- 175°C Operating Temperature
Applications
This versatile MOSFET is suitable for a wide range of power applications, including:
- Power supplies
- Motor drives
- Industrial control systems
- High-power switching circuits
Why Choose This Product?
The INFINEON Transistor MOS-N-Ch 55V 84A 170W <11mR(43A) offers a compelling combination of high performance and reliability. Its robust design, advanced features, and proven HEXFET technology make it a superior choice for demanding applications. The low on-resistance ensures high efficiency, while the high current and voltage ratings provide ample headroom for various power applications.
| Parameter | Value |
|---|---|
| Drain-to-Source Breakdown Voltage (VDSS) | 55V |
| Continuous Drain Current (ID) | 84A |
| Power Dissipation (PD) | 170W |
| On-Resistance (RDS(on)) | <11mR (43A) |
This product is packaged in a TO-220AB package.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
- Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
- Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
- Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
- Name or Model Discrepancies: AI may misrepresent the product name or model.
If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail toš you: [email protected].
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