Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Product Code: TSG65N068CE-RVG
Brand
More similar products
Delivery terms
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Specifications
Supplier product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Supplier parameters
Product code
TSG65N068CE-RVG
Product ID
U-4157842
Case
PDFN88
Drain current
30A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
6.7nC
Gate-source voltage
-10...7V
Kind of channel
enhancement
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
TAIWAN SEMICONDUCTOR
Mounting
SMD
On-state resistance
68mΩ
Polarisation
unipolar
Pulsed drain current
60A
Technology
GaN
Type of transistor
N-JFET
Brand
TAIWAN SEMICONDUCTOR
Supplier's product code
TSG65N068CE-RVG
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].