Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W STMicroelectronics
Product Code: SGT120R65AL
Brand
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Delivery terms
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W STMicroelectronics
Useful information
Specifications
Supplier product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Useful information
Supplier parameters
Product code
SGT120R65AL
Case
PowerFLAT 5x6
Drain current
9A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
3nC
Gate-source voltage
-10...7V
Kind of channel
enhancement
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
STMicroelectronics
Mounting
SMD
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
192W
Pulsed drain current
36A
Technology
GaN
Type of transistor
N-JFET
Brand
STMicroelectronics
Supplier's product code
SGT120R65AL
Product ID
U-3885488
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].