Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W VISHAY
Product Code: SIHB12N60ET1-GE3
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Supplier parameters
Product code
SIHB12N60ET1-GE3
Brand
VISHAY
Supplier's product code
SIHB12N60ET1-GE3
Product ID
U-3045808
Case
D2PAK
Drain current
7.8A
Drain-source voltage
600V
Gate charge
58nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.38Ω
Polarisation
unipolar
Power dissipation
147W
Pulsed drain current
27A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
