IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Product Code: NCP5109BDR2G
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Brand
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Specifications
Supplier product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Supplier parameters
Brand
ON SEMICONDUCTOR
Supplier's product code
NCP5109BDR2G
Product ID
U-2593789
Case
SO8
Impulse rise time
160ns
Kind of integrated circuit
high-side
Manufacturer
ONSEMI
Mounting
SMD
Operating temperature
-40...125°C
Output current
-500...250mA
Pulse fall time
75ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
200V
Product code
NCP5109BDR2G
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
