IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA DIODES INCORPORATED
Product Code: DGD2106MS8-13
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Brand
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA DIODES INCORPORATED
Useful information
Specifications
Supplier product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Useful information
Supplier parameters
NomNr
DGD2106MS8-13
Brand
DIODES INCORPORATED
Supplier's product code
DGD2106MS8-13
Product ID
U-163684
Case
SO8
Impulse rise time
220ns
Integrated circuit features
integrated bootstrap functionality
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
Number of channels
2
Operating temperature
-40...125°C
Output current
-600...290mA
Protection
undervoltage UVP
Pulse fall time
80ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
600V
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
