Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 STARPOWER SEMICONDUCTOR
Product Code: GD15PJY120L2S
More similar products
Delivery terms
2024-08-29 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 23 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 STARPOWER SEMICONDUCTOR
Specifications
SKU
U-2964922
Product code
GD15PJY120L2S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Supplier parameters
Supplier's product code
GD15PJY120L2S
Product ID
U-2964922
Product code
GD15PJY120L2S
Case
L2.2
Collector current
15A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
30A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
