Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W ONSEMI
Product Code: FQP4N80
Brand
More similar products
Delivery terms
2024-08-29 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 18 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Brand
Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Supplier parameters
Product code
FQP4N80
Brand
ON SEMICONDUCTOR
Supplier's product code
FQP4N80
Product ID
U-2349580
Case
TO220AB
Drain current
2.47A
Drain-source voltage
800V
Gate charge
25nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
3.6Ω
Polarisation
unipolar
Power dissipation
130W
Pulsed drain current
15.6A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
