Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD IXYS
Product Code: MMIX1G320N60B3
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Useful information
Supplier parameters
Product code
MMIX1G320N60B3
Brand
IXYS
Supplier's product code
MMIX1G320N60B3
Product ID
U-261740
Case
SMPD
Collector current
180A
Collector-emitter voltage
600V
Gate charge
585nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
IXYS
Mounting
SMD
Power dissipation
1kW
Pulsed collector current
1kA
Technology
BiMOSFET™
Type of transistor
IGBT
Turn-off time
595ns
Turn-on time
107ns
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
