Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A MICROCHIP (MICROSEMI)
Product Code: APT10M19BVRG
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Useful information
Supplier parameters
Product code
APT10M19BVRG
Supplier's product code
APT10M19BVRG
Product ID
U-1905727
Case
TO247-3
Drain current
75A
Drain-source voltage
100V
Gate charge
300nC
Gate-source voltage
±30V
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
19mΩ
Polarisation
unipolar
Power dissipation
370W
Pulsed drain current
300A
Technology
POWER MOS 5®
Type of transistor
N-MOSFET
Brand
MICROCHIP
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
