Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W LUGUANG ELECTRONIC
Product Code: LGE3M160120E
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Useful information
Supplier parameters
Product code
LGE3M160120E
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M160120E
Product ID
U-3846310
Case
D2PAK
Drain current
11A
Drain-source voltage
1.2kV
Gate charge
42nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
LUGUANG ELECTRONIC
Mounting
SMD
On-state resistance
0.285Ω
Polarisation
unipolar
Power dissipation
127W
Pulsed drain current
38A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
