Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W LUGUANG ELECTRONIC

Product Code: LGE3M160120Q
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery in Lithuania

Home delivery in Lithuania

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.

Over €30.00

(Orders up to 1000 kgs)

For free

To €30.00

(Orders up to 3 kgs)

€2.99

To €30.00

(Orders up to 1000 kgs)

€3.59

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Delivery to a DPD Pickup location

Delivery to a DPD Pickup location

After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.

€1.99

Product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W LUGUANG ELECTRONIC

Useful information


Specifications

SKU
U-3846311
Product code
LGE3M160120Q

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W

Useful information

Supplier parameters

Product code
LGE3M160120Q
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M160120Q
Product ID
U-3846311
Case
TO247-4
Drain current
16A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
43nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
0.25Ω
Polarisation
unipolar
Power dissipation
138W
Pulsed drain current
50A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].