Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W MICROCHIP (MICROSEMI)
Product Code: MSC080SMA120B4
Brand
More similar products
Delivery terms
2024-10-17 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 35 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Useful information
Supplier parameters
Product code
MSC080SMA120B4
Brand
MICROCHIP
Supplier's product code
MSC080SMA120B4
Product ID
U-1906009
#Promotion
aac_202202
Case
TO247-4
Drain current
26A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
64nC
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
200W
Pulsed drain current
90A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
