Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W GeneSiC SEMICONDUCTOR
Product Code: G3R75MT12D
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Delivery terms
2024-09-19 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 251 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2246897
Product code
G3R75MT12D
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Useful information
Supplier parameters
Supplier's product code
G3R75MT12D
Product ID
U-2246897
Product code
G3R75MT12D
Case
TO247-3
Drain current
29A
Drain-source voltage
1.2kV
Gate charge
54nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
207W
Pulsed drain current
80A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
