Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W BASiC SEMICONDUCTOR
Product Code: B2M032120Y
Brand
More similar products
Delivery terms
2024-08-16 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 60 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Useful information
Supplier parameters
Product code
B2M032120Y
Case
TO247PLUS-4
Drain current
60A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
40nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
50mΩ
Polarisation
unipolar
Power dissipation
375W
Pulsed drain current
190A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B2M032120Y
Product ID
U-3959205
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
