Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W LITTELFUSE

Product Code: LSIC1MO120G0025
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery in Lithuania

Home delivery in Lithuania

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.

Over €30.00

(Orders up to 1000 kgs)

For free

To €30.00

(Orders up to 3 kgs)

€2.99

To €30.00

(Orders up to 1000 kgs)

€3.59

Shipping parcel

Delivery to a DPD Pickup location

Delivery to a DPD Pickup location

After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.

€1.99

Product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W LITTELFUSE

Specifications

SKU
U-3133762
Product code
LSIC1MO120G0025

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W

Supplier parameters

Product code
LSIC1MO120G0025
Brand
LITTELFUSE
Supplier's product code
LSIC1MO120G0025
Product ID
U-3133762
Case
TO247-4
Drain current
70A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
265nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LITTELFUSE
Mounting
THT
On-state resistance
25mΩ
Polarisation
unipolar
Power dissipation
500W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].