Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W INFINEON TECHNOLOGIES
Product Code: IMW120R020M1HXKSA1
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Useful information
Supplier parameters
Product code
IMW120R020M1HXKSA1
Supplier's product code
IMW120R020M1HXKSA1
Product ID
U-2891187
Case
TO247
Drain current
71A
Drain-source voltage
1.2kV
Gate-source voltage
-7...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
36mΩ
Polarisation
unipolar
Power dissipation
188W
Pulsed drain current
213A
Technology
SiC
Type of transistor
N-MOSFET
Brand
INFINEON
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
