Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W INFINEON TECHNOLOGIES
Product Code: IMZA65R027M1HXKSA1
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Useful information
Supplier parameters
Product code
IMZA65R027M1HXKSA1
Brand
INFINEON
Supplier's product code
IMZA65R027M1HXKSA1
Product ID
U-1876359
Case
TO247-4
Drain current
41A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate-source voltage
-5...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
35mΩ
Polarisation
unipolar
Power dissipation
189W
Pulsed drain current
184A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
