Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W IXYS

Product Code: IXTH130N20T
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Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery in Lithuania

Home delivery in Lithuania

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.

Over €50.00

(Orders up to 1000 kgs)

For free

To €50.00

(Orders up to 3 kgs)

€3.49

To €50.00

(Orders up to 1000 kgs)

€4.99

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Delivery to a DPD Pickup location

Delivery to a DPD Pickup location

After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.

€2.39

Product description

Brand
Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W IXYS

Useful information


Specifications

SKU
U-221459
Brand
Product code
IXTH130N20T

Supplier product description

Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W

Useful information

Supplier parameters

Product code
IXTH130N20T
Brand
IXYS
Supplier's product code
IXTH130N20T
Product ID
U-221459
Case
TO247-3
Drain current
75A
Drain-source voltage
200V
Features of semiconductor devices
thrench gate power mosfet
Gate charge
150nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
IXYS
Mounting
THT
On-state resistance
16mΩ
Polarisation
unipolar
Power dissipation
830W
Pulsed drain current
320A
Reverse recovery time
150ns
Technology
Trench™
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].