Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW NEXPERIA
Product Code: 2N7002P.215
Brand
More similar products
Delivery terms
2024-07-25 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 14051 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Useful information
Supplier parameters
Product code
2N7002P.215
Case
SOT23
Drain current
0.28A
Drain-source voltage
60V
Gate charge
0.8nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
2Ω
Polarisation
unipolar
Power dissipation
0.42W
Pulsed drain current
1.2A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
2N7002P.215
Product ID
U-80249
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
