Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 60A; Idm: 100A VISHAY
Product Code: SIE808DF-T1-E3
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
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Pristatymas į namus
Pristatymas į namus
Perdavę prekes kurjeriui, informuosime Jus el. paštu.
Virš 50,00 € (Užsakymams iki 1000 kg) | Nemokamai |
Iki 50,00 € (Užsakymams iki 3 kg) | 3,49 € |
Iki 50,00 € (Užsakymams iki 1000 kg) | 4,99 € |
Pristatymas į paštomatą
Pristatymas į paštomatą
Perdavę prekes kurjeriui, informuosime Jus el. paštu. Užsakymai virš 50.00 € pristatomi nemokamai.
2,39 €
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 60A; Idm: 100A
Supplier parameters
Product code
SIE808DF-T1-E3
Brand
VISHAY
Supplier's product code
SIE808DF-T1-E3
Product ID
U-3116372
Drain current
60A
Drain-source voltage
20V
Gate charge
155nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.5mΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
