Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A VISHAY

Product Code: SIJA52ADP-T1-GE3
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery in Lithuania

Home delivery in Lithuania

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.

Over €50.00

(Orders up to 1000 kgs)

For free

To €50.00

(Orders up to 3 kgs)

€3.49

To €50.00

(Orders up to 1000 kgs)

€4.99

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Delivery to a DPD Pickup location

Delivery to a DPD Pickup location

After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.

€2.39

Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A VISHAY

Specifications

SKU
U-3116400
Brand
Product code
SIJA52ADP-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A

Supplier parameters

Product code
SIJA52ADP-T1-GE3
Brand
VISHAY
Supplier's product code
SIJA52ADP-T1-GE3
Product ID
U-3116400
Drain current
131A
Drain-source voltage
40V
Gate charge
0.1µC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.3mΩ
Polarisation
unipolar
Power dissipation
48W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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