Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W VISHAY
Product Code: SIRA14DP-T1-GE3
Brand
More similar products
Delivery terms
2024-07-22 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 2367 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Supplier parameters
Product code
SIRA14DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRA14DP-T1-GE3
Product ID
U-3046105
Case
PowerPAK® SO8
Drain current
46A
Drain-source voltage
30V
Gate charge
29nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
8.5mΩ
Polarisation
unipolar
Power dissipation
20W
Pulsed drain current
130A
Technology
TrenchFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
