Transistor: P-MOSFET; Trench; unipolar; -30V; -1A; Idm: -6A; 340mW NEXPERIA
Product Code: NXV90EPR
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: P-MOSFET; Trench; unipolar; -30V; -1A; Idm: -6A; 340mW
Useful information
Supplier parameters
Product code
NXV90EPR
Brand
NEXPERIA
Supplier's product code
NXV90EPR
Product ID
U-2961368
Case
SOT23
Drain current
-1A
Drain-source voltage
-30V
Gate charge
5.2nC
Gate-source voltage
±-20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
0.2Ω
Polarisation
unipolar
Power dissipation
0.34W
Pulsed drain current
-6A
Technology
Trench
Type of transistor
P-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
