Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9
Product Code: CSD22206WT
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Product description
Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9
Specifications
SKU
U-2481392
Product code
CSD22206WT
Supplier product description
Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9
Supplier parameters
Product code
CSD22206WT
Case
DSBGA9
Drain current
-5A
Drain-source voltage
-8V
Gate-source voltage
±6V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
TEXAS INSTRUMENTS
Mounting
SMD
On-state resistance
9.1mΩ
Polarisation
unipolar
Power dissipation
1.7W
Pulsed drain current
-108A
Technology
NexFET™
Type of transistor
P-MOSFET
Supplier's product code
CSD22206WT
Product ID
U-2481392
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
