Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -50A VISHAY
Product Code: SIA477EDJ-T1-GE3
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -50A
Supplier parameters
Product code
SIA477EDJ-T1-GE3
Brand
VISHAY
Supplier's product code
SIA477EDJ-T1-GE3
Product ID
U-3116313
Drain current
-12A
Drain-source voltage
-12V
Gate charge
83nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
32mΩ
Polarisation
unipolar
Power dissipation
19W
Pulsed drain current
-50A
Technology
TrenchFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
