Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Product Code: G3R30MT12J
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2721685
Product code
G3R30MT12J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Useful information
Supplier parameters
Product code
G3R30MT12J
Supplier's product code
G3R30MT12J
Product ID
U-2721685
Case
TO263-7
Drain current
68A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
155nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
459W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
