Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 VISHAY
Product Code: SI4431BDY-T1-E3
Brand
More similar products
Delivery terms
2024-09-04 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 1219 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 3 kgs) | €3.49 |
To €50.00 (Orders up to 1000 kgs) | €4.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €50.00 are delivered free of charge.
€2.39
Supplier product description
Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Supplier parameters
Product code
SI4431BDY-T1-E3
Brand
VISHAY
Supplier's product code
SI4431BDY-T1-E3
Product ID
U-2960832
Case
SO8
Drain current
-5.7A
Drain-source voltage
-30V
Gate charge
20nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
0.9W
Pulsed drain current
-30A
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
